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harry

Behavior determines habit, habit determi

 
 
 

日志

 
 

半导体工业常用英文缩写  

2008-03-06 13:34:52|  分类: 默认分类 |  标签: |举报 |字号 订阅

  下载LOFTER 我的照片书  |

A/D analog to digital

AA atomic absorption

AAS atomic absorption spectroscopy

ABC activity-based costing

ABM activity-based management

AC alternating current; activated carbon

ACF anisotropic conductive film

ACI after-clean inspection

ACP anisotropic conductive paste

ACT alternative control techniques; actual cycle time

ADC analog-to-digital converter

ADE advanced development environment

ADI after-develop inspection

ADT applied diagnostic technique

ADTSEM Apply/Develop Track Specific Equipment Model

AE atomic emission; acousticemission; absolute ellipsometry

AEC advanced equipment controller

AECS Advanced Equipment ControlSystem; Automated Equipment Control System

AEI after-etch inspection; automated equipment interface

AEM analytical electron microscopy

AES Auger emission/electron spectroscopy

AFM atomic force microscopy

AFP abrasive-free polish

Ag silver

A-GEMTF Advanced GEM Task Force

AGV automated guided vehicle

AHF anhydrous hydrogen fluoride

AHU air handling unit

AIR automated image retrieval

Al aluminum

ALD atomic layer deposition

ALE atomic layer epitaxy; application logic element

ALS advanced light source; advanced low-power Schottky

AMC airborne molecular contamination

AMHS automated material handling system

AMT advanced manufacturing technology

AMU atomic mass unit

ANN artificial neural network

ANOVA analysis of variance

AOV air-operated valve

AP adhesion promoter

APA advanced performance algorithm

APC advanced process control

APCD add-on pollution control device

APCFI Advanced Process Control Framework Initiative

APCVD atmospheric pressure chemical vapor deposition

APEC advanced process equipment control

API application programming interface; atmospheric pressure ionization

APM atmospheric passivation module; acoustic plate mode

APRDL Advanced Products Research and Development Laboratory

aPSM attenuating phase-shift mask

AQI ACCESS query interface

AQL acceptable quality level

Ar argon

AR aspect ratio

ARAMS Automated Reliability

ARC antireflective coating

ARDE aspect ratio-dependent etching

ARPA Advanced Research Projects Agency (see DARPA)

ARS angle-resolved scattering

As arsenic

AS/RS automated storage and retrieval system

ASAP Advanced Stepper Application Program

ASIC application-specific integrated circuit

ASO automatic shutoff

ASP advanced strip and passivation; advanced strip processor

ASR automated send receive

ATDF Advanced ToolDevelopment Facility

ATE automatic test equipment

ATG automatic test generation

ATLAS abbreviated test language for all systems

atm atmosphere

ATP advanced technology program; adenosine triphosphate; acceptance and tool performance

ATR attenuated total reflectance

Att attenuated

Au gold

AVP advanced vertical processor

AVS advanced visualization system

AWE asymptotic waveform evaluation

AWISPM above wafer in situ particle monitoring

AWS advanced wet station

B billion; boron

Ba barium

BARC bottom antireflective coating

BASE Boston Area Semiconductor Education (Council)

BAW bulk acoustic wave

BC bias contrast

BDEV behavior-level deviation

BDS Brownian Dynamics Simulation

Be beryllium

BEOL back end of line

BESOI bonded and etchback silicon on insulator

BF brightfield

BFGS Broyden-Fletcher- Goldfarb-Shanno optimization algorithm

BFL buffered field-effect transistor logic

BGA ball grid array

BHT Brinell hardness test

Bi bismuth

BiCMOS bipolar complementary metal-oxide semiconductor

BIFET bipolar field-effect transistor

BIM binary intensity mask

BiMOS bipolar metal-oxide semiconductor

BIST built-in self-test

BIT bulk ion temperature

BITE built-in test equipment

BMC bubble memory controller

BMD bulk micro defect

BOE buffered oxide etchant

BOR bottom of range

BOSS Book of SEMI Standards; binary object storage system

BOX buried oxide

BPR beam profile reflectometry; business process reengineering

BPSG boron phosphosilicate glass

BPTEOS BPSG from a TEOS source

Br bromine

BSE backscattered electron detection

BTAB bumped tape automated bonding

BV breakdown voltage

C carbon

Ca calcium

CA CIM architecture

CAA CIM applications architecture

CAB Competitive Analysis Benchmarking

CAD computer-aided design

CADT control application development tool

CAE computer-aided engineering

CAI computer-assisted instruction

CAM computer-aided manufacturing

CAPS computer-assisted problem solving

CAR chemically amplified resist

CARRI Computerized Assessment of Relative Risk Impacts

CASE computer-aided softwareengineering; computer-aided systems engineering

CAT computer-aided testing

CAW Construction Analysis Workgroup

CAWC cryogenic aerosol wafer cleaning

CBGA ceramic ball grid array

CBS chemical bottle storage area

CBT computer-based training

CC chip carrier; cluster controller

CCC ceramic chip carrier

CCD charge-coupled device

CCSL compatible current-sinking logic

CCW counterclockwise

Cd cadmium

CD critical dimension

CD/OL critical dimension overlay

CDA clean dry air

CDE chemical downstream etch

CDEM Customer Delivery Enterprise Model

CDI collector-diffusion isolation

CDM Common Device Model for SAB

CDO controlled decomposition/oxidation

CDR chemical distribution room

CDS chemical distribution system

Ce cerium

CE capillary electrophoresis

CEC cell evaluation chip

CEE control execution environment

CEM continuous emissions monitoring

CER-DIP ceramic dual in-line package

CFA component failure analysis

CFC chlorofluorocarbon

CFD computational fluid dynamics

CFM contamination-free manufacturing

CIC cleanroom interface chamber

CID charge-injection device

CIE computer-integrated engineering

CIM computer-integrated manufacturing

CIM-OSA computer-integrated manufacturing-open systems architecture (ESPRIT program)

CIP Continuous Improvement Program

CIS Center for Integrated Systems

CISC complex instruction set computer

Cl chlorine

CLCC ceramic leaded chip carrier

CLIC closed-loop intensity control

CM configuration management; cassette module

CMC cassette module controller

CML current mode logic

CMM capability maturity model

CMOS complementary metal-oxide semiconductor

CMP chemical mechanical planarization

CMR common-mode rejection ratio; cancel move request

CNC computer numerical control; condensation nucleus counter

CNT carbon nanotube

Co cobalt

COB chip-on-board

COC cost of consumables

CODEC coder-decoder

COED computer-optimized experimental design

COGS cost of goods sold

CoO cost of ownership

CORBA common object request broker architecture

CORE composite object reference

COSS common object services specification

COT customer-owned tooling

CoV coefficient of variance

Cp process capability

CPD concurrent product development

CPE Communications

CPGA ceramic pin grid array

Cpk process capability index

CQFP ceramic quad flat pack

CQN closed-queuing network

Cr chromium

CRC cyclic redundancy check

CRM Cost/Resource Model

Cs cesium

CSA CIM systems architecture

CSE control systems engineering

CSF critical success factor

CSL current-steering logic

CSMA/CD carrier-sense

CSP chip-scale package

CSPED concurrent semiconductor production and equipment development

CST CIM systems technology

CSTR continuously stirred tank reactor

CSV comma-separated variable

CTC cluster tool controller

CTE coefficient of thermal expansion

CTI cycle time improvement

CTMC cluster tool modular communications

Cu copper

CUB central utility building

CUBES capacity utilization bottleneck efficiency system

CUI common user interface

CUSUM cumulative sum

CV capacitance-to-voltage

CVCM collected volatile condensable materials

CVD chemical vapor deposition

CW continuous wave

Cz Czochralski process

D/A digital to analog

D/B die bonding

DAC digital-to-analog converter

DAS direct absorption spectroscopy

DASSL differential algebraic system solver

DBMS database management system

DC direct current

DCA direct chip attachment

DCATS double-contained acid transfer system

DCE distributed computer environment

DCL digital command language; display communication log

DCS dichlorosilane

DDL device description language

DDMS defect data management system

DEDS discrete-event dynamic simulation

DES data encryption standard; display equipment status

DF darkfield

DFC densified fluid clean

DFE dual-frequency etch

DFM design for manufacturing

DFR design for reliability

DFT design for test

DFY design for yield

DHF dilute hydrofluoric acid

DI deionized; dielectric isolation

DIBL drain-induced barrier leakage

DIC differential interference contrast

DIL dual in-line

DIP dual in-line package

DLBI device-level burn-in

DLOC developed source lines of code

DLS display lot status

DLT device-level test

DLTS deep-level transient spectroscopy

DMA direct memory access; dynamic mechanical analysis

DMH display message helps

DML data manipulation language; display message log

DMM digital multimeter

DMOS diffused metal-oxide semiconductor

DMR display move requests

DO dynamic optimization

DOA dead-on alignment

DOAS differential optical absorption spectroscopy

DOE design of experiments

DOF depth of focus

DOP dioctylphthalate

DPA destructive physical analysis

DPM digital panel meter

DPP discharge-produced plasma

DPSRAM dual-port static random access memory

DRAM dynamic random access memory

DRAPAC Design Rule and Process Architecture Council

DRC design rule check

DRE destruction removal efficiency

DRIFTS diffuse reflectance infrared Fourier transform spectroscopy

DRT defect review tool

DSA display system activity; dimensionally stable anode

DSC differential scanning calorimetry

DSMC direct simulation Monte Carlo

DSQ downstream quartz

DSS display stocker status

DSW direct step-on-wafer

DT dynamic test

DTA differential thermal analysis

DTC direct thermocouple control

DTL diode transistor logic

DTM defect test monitor; delay time multiplier; device test module; digital terrain map

DTMPN defect test monitor phase number

DUT device under test

DUV deep ultraviolet

DV design verification

DVER design rule verification

DVM digital voltmeter

DVS display vehicle status

DWG domain work group

EAPSM embedded attenuated phase-shift mask

EAROM electrically alterable read-only memory

EASE equipment and software emulator

e-beam electron beam

EBHT electron-beam high-throughput lithography

EBIC electron beam-induced current

EBR edge bead removal

EC engineering change; equipment controller

ECA engineering capability assessment

ECAD electronic computer-aided design; engineering computer-aided design

ECAE electronic computer-aided engineering

ECL emitter coupled logic

ECN engineering change notice

ECO engineering change order

ECQB electrochemical quartz crystal balance

ECR electron cyclotron resonance

EDA electronic design automation

EDS energy-dispersive spectroscopy

EDU equipment-dependent uptime

EDX energy-dispersive X-ray

EDXA energy-dispersive X-ray analysis

EEDF electron energy distribution function

EELS electron energy-loss spectroscopy

EEPROM electrically erasable programmable read-only memory

EFEM equipment front-end module

EFOCS evanescent fiber-optic chemical sensor

EFTIR emission Fourier transform infrared spectroscopy

EFV excess flow valve

EGE ethylene glycol ethers

EHS extremely hazardous substance

EI equipment integration

EID Equipment InterfaceDevelopment

EIP Equipment Improvement Program; Equipment Improvement Project

EIS electrochemical impedance spectroscopy

EKF extended Kalman filter

ELF extremely low frequency

EM enterprise model; electromagnetic; electromigration

EMA equipment maturity assessment

EMC electromagnetic capability; electromagnetic compatability

EMF electromagnetic field

EMG electromigration

EMI electromagnetic interference

EMMA electron microscopy and microanalysis

EMP electromagnetic pulse

EMR enter move request

EMU electromagnetic unit

EOS electrical overstress

EOT end of transfer; equivalent oxide thickness

EP extreme pressure; electropolish

EPI epitaxial

EPL electron projection lithography

EPR electron paramagnetic resonance

EPROM electrically programmable read-only memory

EPSS electronic performance support system

EPT equipment performance tracking

EQUIP C/I equipment control and integration

EQUIP RTC equipment real-time control

ERAM equipment reliability

ERM enterprise reference model

ERN external recurrent neural network

ERP extended range pyrometer

ERS event reporting standard

ERT emergency response time

ES engineering specification; expert system

ESC electrostatic chuck

ESCA electron spectroscopy for chemical analysis

ESD electrostatic discharge

ESH environment

ESM electronic service manual

ETAB Executive Technical Advisory Board

ETQR External Total Quality and Reliability

EUV extreme ultraviolet

eV electron volt

EWMA exponentially weighted moving average

F fluorine

F/I final inspection

FA failure analysis

FAB fast atom bombardment

FAMOS floating-gate avalanche-injection metal-oxide semiconductor

FBGA fine-pitch ball grid array

FC flip chip

FCM facilities cost model

FCS factory control system

FDC fault detection and classification

FDE frequency domain experiments

FDSOI fully depleted silicon on insulator

Fe iron

FEC fabrication evaluation chip

FEM finite element model

FEOL front end of line

FESEM field emission scanning electron microscopy

FET field-effect transistor

FFT fast Fourier transform

FFU filter fan unit

FI filterability index; factory integration

FIB focused ion beam

FID flame ionization detector

FIFO first-in

FIMS front-opening interface mechanical standard

FL fuzzy logic

FLOPC floating point operations needed per cycle

FLOTOX floating gate tunnel oxide

FLRT factory layout/relayout tool

FM foreign material

FMEA failure mode and effects analysis

FMMC factory material movement component

FMVP Framework Member Validation Project

FNN feed-forward neural network

FOCS fiber-optic chemical sensor

FOSB front opening shipping box

FOUP front opening unified pod

FOV field of view

FOX field oxide

FP flash point

FPD focal plane deviation; flat panel display

FPGA field-programmable gate array

FPLA field-programmable logic array

FPLF field-programmable logic family

FPLS field-programmable logic switch

FPMS Factory Performance Modeling Software

FPROM field-programmable read-only memory

FRACAS Failure Reporting

FRAME Failure Rate Analysis and Modeling

FRMB fast ramp mini batch

FSG fused silica glass

FSM finite state machine

FT final test; Fourier transform

FTA fault tree analysis

FTAB Focus Technical Advisory Board

FTIR Fourier transform infrared

FW full wave

FWHM full-width half-maximum

FZ float zone

Ga gallium

GAC granular activated carbon

GC gas chromatography; gravimetric calibrator

GCC generic cell controller

GCD gas chromatography distillation

GCMS gas chromatography mass spectroscopy

GDPP gas drive plasma pinch

GDS graphical design system; graphical design software

Ge germanium

GEM Generic EquipmentModel

GEMVS GEM verification system

GES generic equipment simulator

GFC gas filter correlation

GFCI ground fault circuit interrupter

GIDL gate-induced drain leakage

GILD gas immersion laser doping

GLC gas liquid chromatography

GOI gate oxide integrity

GPIB general-purpose interface bus

GSCE gas source control equipment

GTS GEM Test System

H hydrogen

HAP hazardous air pollutant

HARI high aspect ratio inspection

HAST highly accelerated stress testing

HAZCOM Hazard Communication Standard

HB horizontal Bridgeman crystal

HCI hot carrier injection

HCM hollow cathode magnetron

HCMOS high-density CMOS

HCS hot-carrier suppressed

HD high density

HDL hardware description language

HDP high-density plasma

HDPE high-density polyethylene

He helium

HEM high-efficiency matching

HEPA high-efficiency particulate air

Hf hafnium

HF hydrofluoric acid

Hg mercury

HIBS heavy ion backscattering spectrometry

HiPOx high-pressure oxygen

HLF horizontal laminar flow

HMDS hexamethyldisilizane

HMIS hazardous materials inventory statement

HMMP hazardous materials management plan

HMOS high-performance MOS; high-density MOS

HOMER hazardous organic mass emission rate

HOPG highly oriented pyrolitic graphite

HP high purity

HPEM Hybrid Plasma Equipment Model

HPI high pressure isolation

HPL high-performance logic

HPLC high-performance liquid chromatography

HPM hazardous production materials; high-purity metal

HPV high-pressure vent

HRA human reliability analysis

HRR high ramp rate

HRTEM high-resolution transmission electron microscopy

HSQ hydrogen silsesquioxane

HTO high-temperature oxidation

HTRB high-temperature reverse bias

HUPW hot ultrapure water

HVAC heating

I iodine

I/O input/output

I2L integrated injector logic

I300I International 300 mm Initiative

IC integrated circuit; Investment Council; ion chromatography

ICAP inductively coupled argon-plasma spectrometry

ICMS integrated circuit measurement system

ICP inductively coupled plasma

ICP-AES inductively coupled plasma atomic emission spectroscopy

ICP-MS inductively coupled plasma mass spectrometry

ICT ideal cycle time

IDDQ direct drain quiescent current

IDEAL initiating

IDL interface definition language

IDLH immediately dangerous to life or health

IDS interactive diagnostic system

IEA ion energy analysis

IEC infused emitter coupling

IEDF ion energy distribution function

IERN internal-external recurrent neural network

IF interface

IGFET insulated-gate field-effect transistor

ILB inner lead bond

ILD interlevel dielectric; interlayer dielectric

ILS intracavity laser spectroscopy

IM integrated model; integrated metrology

IMD intermetal dielectric

IMMA ion microphobe mass analysis

IMS ion mobility spectroscopy

In indium

INCAMS individual cassette manufacturing system

IPA isopropyl alcohol

IPL ion projection lithography

IPT ideal process time

Ir iridium

IR infrared

IRAS infrared reflection-absorption spectroscopy

IRIS imaging of radicals interacting with surfaces

IRN internal recurrent neural network

IRONMAN Improving Reliability of New Machines at Night

IRTC-1 interconnect reliability test chip-1

IS information systems; interface specifications; integrated systems

ISC Industry Steering Council

ISEM inspection/review specific equipment model

ISM inductor super magnetron

ISMT International SEMATECH

ISPM in situ particle monitor

ISR in situ rinse

ISS ion scattering spectroscopy

ITRI Interconnection Technology

ITRS International Technology

IVH interstitial via hole

IVP integrated vacuum processing

JDP Joint Development Program

JEDEC Joint Electron Device Engineering Council

JESSI Joint European Submicron Silicon Initiative

JIC Joint Industrial Council

JIT just-in-time

JJT Josephson junction transistor

JVD jet vapor deposition

K potassium; thousand

keV kilo electron volt

KPA key process area

Kr krypton

kV kilovolt

La lanthanum

LAMMA laser micro-mass analysis

LAMMS laser micro-mass spectroscopy

LC inductance-capacitance; liquid chromatography

LCA lifecycle analysis

LCC leaded chip carrier

LCL lower confidence limit

LDD lightly doped drain

LDL lower detection limit

LDP low-density plasma

LDPE low-density polyethylene

LEC liquid encapsulated Czochralski crystal

LEL lower explosive limit

LER line edge roughness

LF laminar flow

LFL lower flammable limit

LGQ linear Gaussian quadratic

Li lithium

LI laser interferometry

LIC linear integrated circuit

LID leadless inverted device

LIFO last in

LIMA laser-induced mass analysis

LIMS laser-induced mass spectrometry

LLCC leadless chip carrier

LLD lower limit of detection

LLNQ least lots next queue

LM light microscope

LMMA laser microprobe mass analysis

LOCOS local oxidation of silicon

LOS loss of selectivity

LPC linear predictive coding; laser particle counter; low particle concentration; liquid-borne particle counter

LPCVD low-pressure chemical vapor deposition

LPD light point defect

LPE liquid phase epitaxy

LPI low-pressure isolation

LPP laser-produced plasma

LRS laser Raman spectroscopy

LSE latex sphere equivalent

LSHI large-scale hybrid integration

LSI large-scale integration

LSM laser scanning microscope

LTA laser thermal anneal

LTCVD low-temperature chemical vapor deposition

LTO low-temperature oxidation/oxide

LTPD lot tolerance percent defective

LTV local thickness variation

LV latent variable

LVDT linear voltage differential transducer

LVI low-voltage inverter

LVS layout verification of schematic

LWR linewidth reduction

LWS large wafer study

M million; mega

MACT maximum achievable control technology

MALDI matrix-assisted laser desorption and ionization

MAN metropolitan area network

Management Standard

Manufacturing and Science

MAP manufacturing automation protocol

Master Deliverables List

MAWP maximum allowable working pressure

MB machine batch

MBC machine bath collection

MBE molecular beam epitaxy

MBPC model-based process control

MBTC model-based temperature control

MCBA mean cycles between assists

MCBF mean cycles between failures

MCBI mean cycles between interrupts

MCM multichip module; manufacturing cycle management

MCP master control processor;multichip package

MCS material control system

MCU microprocessor control unit; mobile calibration unit

MCVD metal chemical vapor deposition

MDL minimum detection limit;

MD-MOS multi-drain metal-oxide semiconductor

MDQ market-driven quality

MEBS medium energy backscattering spectrometry

MEEF mask error enhancement factor

MEMS microelectromechanical system

MERIE magnetically enhanced reactive ion etching

MES manufacturing execution systems

MESFET metal-semiconductor field-effect transistor

METS Materials and Equipment Trading Service

MeV mega electron volt

MFC mass flow controller

MFM mass flow meter

Mg magnesium

MG manufactured goods

MHI material hazard index

MHz megahertz

MIC monolithic integrated circuit

MID material ID

MIE magnetron ion etching

MIM metal-insulator-metal

MIS metal insulator silicon

MLCC multilayer ceramic capacitor

MLL modify lot location

MLM multilevel metal

MLR message log report

MMC Manufacturing Methods Council

MMD Microlithographic Mask Development program

MMIC monolithic microwave integrated circuit

MMM material movement management

MMMS Material Movement

MMO multimodel optimization

MMOS modified MOS

MMST Microelectronics Manufacturing Science and Technology

Mn manganese

MNOS metal-nitride-oxide semiconductor

MNS metal-nitride semiconductor

Mo molybdenum

MO metal-organic

MOCVD metal-organic chemical vapor deposition

MOP modify operating procedures

MOS metal-oxide semiconductor

MOS-C metal-oxide semiconductor capacitor

MOSFET metal-oxide semiconductor field-effect transistor mp melting point

MP massively parallel

MP-OES multipoint optical emission spectroscopy

MPRES modular plasma reactor simulator

MPU microprocessor unit

MRP materials requirements planning

MRP-II manufacturing resource planning

MS mass spectrometry; mass spectroscopy

MSDS Material Safety Data Sheet

MSEM Metrology Specific Equipment Model

MSG Management Steering Group

MSHA Mine Safety and Health Administration

MSI medium-scale integration; manufacturing support item

MSID mass spectrometer lead detector

MSLD mass spectrometer leak detector

MSTAB Manufacturing Systems Technical Advisory Board

MTBA mean time between assists

MTBF mean time between failures

MTBFp mean (productive) time between failures

MTBI mean time between interrupt; mean time between incident

MTOL mean time off line; mean time on line

MTS Material Tracking Standard

MTTA mean time to assist

MTTF mean time to failure

MTTR mean time to repair

MV megavolt

MVTR moisture vapor transmission rate

MW molecular weight

MWBC mean wafers between cleans

MWT monitor wafer turner

N nitrogen

Na sodium

NA numerical aperture

NCMS National Center for

NCS Network Communication Standard

NDA nondisclosure agreement

NDE nondestructive evaluation

NDIR nondispersive infrared spectroscopy

NDP neutron depth profiling

NDT nondestructive testing

NDUV nondispersive ultraviolet spectroscopy

NEC National Electric Code

NESHAP National Emissions Standards for Hazardous Air Pollutants

NFOM near-field optical microscopy

NGL next-generation lithography

Ni nickel

NIL nanoimprint lithography

NIRA near-infrared reflection analysis

NMOS negative channel metal-oxidesemiconductor

NMR nuclear magnetic resonance

NN neural network

NRE nonrecurring engineering

NTRS National Technology Roadmap for Semiconductors

NTU nephelometric turbidity unit

NVR non-volatile residue

O oxygen

OBA object behavior analysis

OBEM Object-Based Equipment Model

OBIC optical beam-induced current

OBL object-based language

OC open cassette

OCR optical character recognition

OD outside diameter

ODS ozone-depleting substances

OEE overall equipment effectiveness

OEM original equipment manufacturer

OES optical emission spectroscopy

OHT overhead transport; overhead hoist transport

OHV overhead vehicle

OL overlay

OLB outer lead bond

OLE object linking and embedding

OM operational modeling; optical microscopy

OMA object management architecture

OMS optical mass spectroscopy

OMT object modeling technique

OO object-oriented

OOA object-oriented analysis

OOD object-oriented design

OODB object-oriented database

OODBMS object-oriented database management system

OOP object-oriented programming

OPC optical particle counter; optical proximity correction

OS operating system

OSD organic spin-on dielectric

OSF Open Systems Foundation

OSG organosilicate glass

OSI open system interconnection

OSRM Office of Standard Reference Materials

OSS Object Services Standard

Ox oxide

P phosphorous

P/T precision-tolerance

PAB post-apply bake

PAC photoactive compound

PACVD plasma-assisted chemical vapor deposition

PA-FTIR photoacousticFourier transform infrared spectroscopy

PAG photoacid generator

PAL process automation language; programmable array logic; process asset library

PAM process application module

PAS photoacoustic spectroscopy

PAWS portable acoustic wave sensor

Pb lead

PBET Performance-Based Equipment Training

PBGA plastic ball grid array

PBL poly-buffered LOCOS

PBS photon backscattering

PC personal computer; programmable controller; process control

PCAD packaging computer-aided design

PCB printed circuit board

PCMP post-chemical mechanical polishing

PCMS plasma chemistry Monte-Carlo simulation

PCO photocatalytic oxidation

PCR principle component regression

PCT process change team

Pd palladium

PDC passive data collection

PDF portable document format

PDSOI partially depleted silicon on insulator

PDU protocol data unit

PDVC phase-dependent voltage contrast

PEB post-exposure bake

PECVD plasma-enhanced chemical vapor deposition

PED post-exposure delay

PEDS plasma-enhanced deposition system

PEELS parallel electron energy loss spectrometry

PEL permissible exposure level

PES photoelectron spectroscopy

PET post-etch treatment

PETEOS plasma-enhancedtetraethylorthosilicate

PFA perfluoroalkoxy

PFC perfluorocarbon

PFPE perfluorinated polyether

PGA pin grid array

P-GILD projection gas immersion laser doping

PGV person-guided vehicle

PI proportional integral

PID proportional integral derivative; process-induced defect

PIII plasma immersion ion implantation

PIND particle impact noise detection

PIP process-induced particle

PIV peak inverse voltage; post indicator valve

PLA programmable logic array

PLC programmable logic controller

PLCC plastic leaded chip carrier

PLL plasma lockload

PLS partial least squares; projection of latent structures

PLY photolimited yield

PM process monitor; preventive maintenance; process module

PMC process module controller

PMCC Pensky-Martens closed cup

PMI phase measuring interferometer

PMMA polymethyl methacrylate

PMOS positive channel metal-oxide semiconductor

PMS particle measuring system

PMT photomultiplier tube

PMTF Product Management Task Force

POR process-of-record

POU point-of-use

POUCG point-of-use chemical generation

PPE personal protective equipment

PPGA plastic pin grid array

PPID process program identification

PQFP plastic quad flat pack

PRAS particle reactor analysis services

PRB pseudo-random binary

PRBS pseudo-random binary sequence

PROM programmable read-only memory

PRSC parametric response surface control

PRV person rail guided vehicle

PS porous silicon

PSB phase-shifting blank

PSC porous silicon capacitor

PSD power spectral density; port status display

PSG phosphosilicate glass

PSII plasma source ion implantation

PSL polystyrene latex

PSLS polystyrene latex sphere

PSM phase-shift mask

Pt platinum

PTAB Project TechnicalAdvisory Board

PTC pre- and post-process treatment chambers

PTFE polytetrafluorethylene

PVA polyvinylacetate

PVC polyvinylchloride

PVD physical vapor deposition

PVDF polyvinylidene fluoride

PWB printed wiring board

PWP particles per wafer pass

QA quality assurance

QC quality control

QCM quartz crystal microbalances

QDR quick dump rinse

QFD quality function deployment

QFP quad flat pack

QMS quadrupole mass spectrometry

QSR quality system review

QTAT quick turn around time

R2R run-to-run

Ra radium

RAC remote access and control

RAIRS reflection-absorption infrared spectroscopy

RAM random access memory;reliability

RAMP Reliability Analysis and Modeling Program

Rb rubidium

RBB base sheet resistance

RBS refractive backscattering; Rutherford backscattering spectroscopy

RCWA rigorous coupled wave analysis

RDR rotating disk reactor

Re rhenium

REL recommended exposure limit

Research Institute

RESSFOX recessed sealed sidewall field oxidation

RF radio frequency; resonance frequency

RFI request for information; radio frequency interference

RFM radio frequency monitoring

RFO restricted flow orifice

RFP request for plan; request for proposal; radio frequency probe

RGA residual gas analysis

RGV rail-guided vehicle

RH relative humidity

RI reliability improvement

RIE reactive ion etch

RISC reduced instruction set computer/computing

RIST rule induction and statistical testing

RMOS refractory metal-oxide semiconductor

RMS root mean square; Recipe Management Standard

RMTF Recipe Management Task Force

RNN recurrent neural network

RO reverse osmosis

Roadmap for Semiconductors

ROC remote object communications

ROE return on equity

ROI return on investment

ROM read-only memory

RPAO remote plasma-assisted oxidation

RR removal rate

RRMSEP relative root mean square error of prediction

RSE reactive sputter etch

RSF relative sensitivity factor

RSM response surface methodology; response surface matrix

RT room temperature

RTA rapid thermal anneal

RTB real-time backplane

RTCVD rapid thermal chemical vapor deposition

RTD resistance temperature detector

RTL resistor-transistor logic; register transfer level

RTM rapid thermal multiprocessing

RTO rapid thermal oxidation; regenerative thermal oxidizer

RTP rapid thermal processing/processor

RTR real-time reporting

Ru ruthenium

S sulfur

S/D source/drain

S/N signal-to-noise

SA surface area; subresolution assist; structured analysis

SAM scanning auger microscopy

SAT spray acid tool

SAW surface acoustic wave

Sb antimony

SB strong base ion exchange

SC1 Standard Clean 1

SC2 Standard Clean 2

SCA surface charge analysis

SCALE SEMATECH Cell Application Learning Environment

SCALPEL scattering with aperture limited projection lithography

SCC strategic cell controller

SCCS source code control system

SCE short channel effects

SCF super critical fluid

SCI surface charge imaging

SCM scanning capacitance microscopy

SCOE SEMATECH Center of Excellence

SCP single-chip package

SCR silicon-controlled rectifier

SD small dual in-line package; structured design

SDFL Schottky-diode FET logic

Se selenium

SE spectroscopic ellipsometry; secondary electron

SEAJ Semiconductor Equipment Association of Japan

SEC size exclusion chromatography

SECS Semiconductor Equipment Communications Standard

SEG selective epitaxial growth

SEIM software engineering improvement method

SEM scanning electron microscopy; specific equipment model

SEMI Semiconductor Equipment and Materials International

SFC supercritical fluid chromatography

SFCS shop floor control system

SFCS I/F shop floor control system interface

SGMRS Semiconductor Generic Manufacturing Requirements Specification

Si silicon

SIA Semiconductor Industry Association

SIDP sputter ion depth profiling

SIMO single input

SIMOX separation by implantation of oxygen

SIMS secondary ion mass spectroscopy

SiP system-in-a-package

SISO single input

SL specification limit

SLAM scanning laser acoustic microscopy; single-layer aluminum metallization

SLC surface laminar circuit

SM stress migration

SMB single-mask bumping

SMC surface-mounted component

SME subject matter expert; software maintenance engineer

SMIF standard mechanical interface

SMPM SECS message protocol machine

SMS SECS message service

SMTS Strategic Material Transport System

Sn tin

SNMS sputtered neutral mass spectroscopy

SNOM scanning near-field optical microscopy

SNR signal-to-noise ratio

SO small outline (package)

SoC system-on-a-chip

SOD spin-on dielectric

SODAS SEMATECH Organized Damage Analysis Software

SOG spin-on glass

SOI silicon on insulator

SOIC small outline integrated circuit

SOM scanning optical microscopy; sulfuric acid-ozone mixture

SoP system-on-a-package

SOP standard operating procedure

SOS silicon on sapphire

SPC statistical process control

SPICE simulation program with integrated circuit emphasis

SPIDER SEMATECH Process Induced Damage Effect Revealer

SPIDER-MEM SPIDER-Manufacturing Equipment Monitor

SPIN Software Process Improvement Network

SPM scanning probe microscopy

SPP single-phase printing

SPR semiconductor process representation

SPV surface photo voltage

SQC statistical quality control

SQPMM Software Quality and Process Maturity Model

Sr strontium

SRAM static random access memory

SRC Semiconductor Research Corp.

SRP spreading resistance probe

SRS software requirements specification

SSA Semiconductor Safety Association; spatial signature analysis

SSE sum squared error

SSEM Stepper Specific Equipment Model

SSI small-scale integration

SSM strategic sourcing methodology

sSOI strained silicon on insulator

SSQA Standardized Supplier Quality Assessment

SSRL SEMATECH Software Reuse Library

SSRP SEMATECH Software Reuse Program

STAR simultaneous transmitted and reflected

STEL short-term exposure limit

STEM scanning transmission electron microscopy

STI shallow trench isolation

STM scanning tunneling microscopy

STP standard temperature and pressure; system test plan

SU subresolution attenuated

SWEAT standard wafer-level electromigration accelerated test

SWI static walkthrough/inspection

SWIM Semiconductor Workbench for Integrated Modeling

SWP single-wafer processing

SWR semiconductor wafer representation

SWV square wave voltammetry

T/C thermocompression

Ta tantalum

TAB Technical Advisory Board; tape automated bonding

TAP Tool Application Program

TAS trace analysis system

TASC Technical Analysis Service for CoO

TAT turnaround time

TBAH tetrabutylammonium hydroxide

TC time constant; temperature coefficient; thermocouple

TCA test calibration assembly; 1

TCAD technology computer-aided design

TCC tactical cell controller

TCE temperature coefficient of expansion

TCM tunneling current microscopy

TCP transformer-coupled plasma; tape carrier package

TCP/IP transmission control protocol/Internet protocol

TCR temperature coefficient of resistance

TD thermal desorption

TDDB time-dependent dielectric breakdown

TDEAT tetrakis (diethylamino) titanium

TDLAS tunable diode laser absorption spectroscopy

TDMAT tetrakis (dimethylamido) titanium

TDMS thermal desorption mass spectrometry

TDS thermal desorption spectroscopy

Te tellurium

TE transverse electric; transmitted electron

TEA transverse excited atmosphere

TEC thermal expansion coefficient; test and electrical characterization

TECAP transistor electrical characterization and analysis program

TED transient enhanced diffusion; transmitted electron detection

TEG technical exchange group

TEM transmission electron microscopy; transverse electromagnetic

TEOS tetraethylorthosilicate; tetrethoxysilicide

TFC total fault coverage

TFE tetrafluorethylene

TFT thin-film transistor

TG thermogravimetry

TGA thermal gas analysis; thermal gravimetric analysis

THC total hydrocarbons

Ti titanium

TIBA triisobutlaluminum

TIR total indicator runout; total internal reflection

TIS tool-induced shift

Tl thallium

TLC thin layer chromatography

TLE tool loading elevator

TLI thin layer imaging

TLM tape-laying machine; telemeter; transition line model

TLV threshold limit value

TLV/TWA threshold limit value/time-weighted average

TM transport module

TMA thermal mechanical analyzer

TMB trimethylborate

TMC transport module controller; transfer module controller

TMP trimethylphosphate; turbomolecular pump

TO transistor outline package

TOA take-off angle

TOC total organic carbon; total oxidizable carbon

TOF time-of-flight

TPD temperature program desorption

TPG test pattern generation

TPM total productive maintenance; total productive manufacturing

TPRS temperature programmed reaction spectroscopy

TPU thermal processing unit

TQM total quality management

TSCA Toxic Substances Control Act

TSI top surface imaging

TSOP thin small outline package

TSP temperature-sensitive parameter

TT technology transfer

TTL transistor-transistor logic

TTV total thickness variation

TVS triangular voltage sweep

TWA time-weighted average

TWG Technical Working Group

TXRF total X-ray fluorescence

U uranium

UBM under-bump metallurgy

UCL upper confidence limit; upper control limit

UF ultra-filtration

UHF ultrahigh frequency

UHP ultrahigh purity

UHV ultrahigh vacuum

UID user identification

ULA uncommitted logic array

ULK ultralow-k

ULPA ultralow particulate air

ULSI ultralarge-scale integration uph units per hour

UPW ultrapure water

USART universal synchronous/ asynchronous receiver/transmitter

USOP ultrasmall outline package

Utt unattenuated

UV ultraviolet

V vanadium; volt

VAC volts alternating current

VAR value-added reseller; volt-ampere reactive

VASE variable angle spectroscopic ellipsometry

VDC volts direct current

VDP Van der Pauw

VDS vapor distribution system

VHF very high frequency

VLE vapor levitation epitaxy

VLF vertical laminar flow

VLSI very large-scale integration

VME versa micromodule extension; virtual manufacturing enterprise

V-MOS v-groove metal-oxide semiconductor

VOC volatile organic compound

VPD vapor phase desorption; vapor phase decomposition

VPD-ICPMS vapor phase decomposition-inductively coupled plasma mass spectroscopy

VTP vertical thermal processor

VTVM vacuum tube voltmeter

VUV vacuum ultraviolet

W tungsten

W/B wire bonding

WAN wide area network

WB weak base

WBS work breakdown structure

WBSEM Wire Bonder Specific Equipment Model

WDS wavelength-dispersive spectrometry of X-rays

WDX wavelength-dispersive X-ray

WDXA wavelength-dispersive X-ray analysis

WEC wafer environment control

WFT wafer fabrication template

WIB within-batch

WIP work in process; work in progress

WIW within-wafer

WIWNU within-wafer non-uniformity

WLBI wafer-level burn-in

WLP wafer-level package

WLT wafer-level test

WNP waste neutralization plant

WPC wafer process chamber

wph wafers per hour

WSI wafer-scale integration

WTC wafer transfer chamber

WTW wafer to wafer

WTWNU wafer-to-wafer non-uniformity

X inductive reactance

XANES X-ray adsorption near edge structure spectroscopy

Xe xenon

XLS excimer laser system; extended light scatterer

XPS X-ray photoelectron spectroscopy

XRD X-ray diffraction

XRF X-ray fluorescence spectrometry

Y yttrium

YAG yttrium aluminum garnet

Z zinc

Zr zirconium



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